| CPC H10F 39/811 (2025.01) [H10F 39/153 (2025.01); H10F 39/18 (2025.01); H10F 39/8037 (2025.01); H10F 39/8053 (2025.01); H10F 39/8063 (2025.01); H10F 39/807 (2025.01)] | 17 Claims |
|
1. An image sensor, comprising:
a substrate having a first surface and a second surface that are opposite to each other, the substrate including a plurality of unit pixel regions having photoelectric conversion regions and floating diffusion regions disposed adjacent to the first surface,
gate electrodes disposed on the first surface of the substrate,
a pixel isolation pattern disposed in the substrate and configured to define the plurality of unit pixel regions; and
an interconnection layer disposed on the first surface of the substrate, the interconnection layer includes a conductive structure and a first insulating layer enclosing the conductive structure,
wherein the conductive structure comprises:
a connection portion that extends parallel to the first surface of the substrate and is spaced apart from the first surface of the substrate; and
a plurality of contacts that extend vertically from the connection portion towards the first surface of the substrate, and
wherein the first insulating layer includes an etch stop layer disposed therein, the first insulating layer directly contacting upper and lower surfaces of the etch stop layer,
wherein each of the plurality of contacts are spaced apart from each other with the pixel isolation pattern interposed therebetween,
wherein each of the plurality of contacts are coupled to the floating diffusion regions, respectively,
wherein the etch stop layer extends parallel to the first surface of the substrate and includes a material that is different from a material of the first insulating layer, the etch stop layer having an etch selectivity with respect to the first insulating layer.
|