| CPC H10F 39/807 (2025.01) [H10F 39/18 (2025.01); H10F 39/802 (2025.01); H10F 39/8037 (2025.01); H10F 39/811 (2025.01)] | 19 Claims |
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1. An image sensor, comprising:
a pixel isolation structure disposed on a semiconductor substrate, the pixel isolation structure defining a plurality of pixel regions;
a photoelectric conversion region of the semiconductor substrate disposed on each of the plurality of pixel regions;
a floating diffusion region, of the semiconductor substrate, spaced apart from the photoelectric conversion region;
a transfer gate electrode disposed between the photoelectric conversion region and the floating diffusion region on each of the plurality of pixel regions;
a dielectric layer disposed on the semiconductor substrate and covering the transfer gate electrode;
a plurality of active patterns, spaced apart from each other, disposed on a top surface of the dielectric layer; and
a plurality of pixel transistors disposed on corresponding active patterns of the plurality of active patterns,
wherein at least one of the plurality of active patterns overlaps the photoelectric conversion region.
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