US 12,439,717 B2
Grid structure with at least partially angled sidewalls
Wei-Lin Chen, Tainan (TW); Ching-Chung Su, Tainan (TW); Chun-Hao Chou, Tainan (TW); and Kuo-Cheng Lee, Tainan (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 2, 2023, as Appl. No. 18/364,216.
Application 18/364,216 is a division of application No. 17/249,787, filed on Mar. 12, 2021, granted, now 11,990,488.
Prior Publication US 2024/0021635 A1, Jan. 18, 2024
Int. Cl. H10F 39/00 (2025.01); H04N 25/77 (2023.01)
CPC H10F 39/8053 (2025.01) [H04N 25/77 (2023.01); H10F 39/803 (2025.01); H10F 39/807 (2025.01); H10F 39/8063 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming a plurality of grid layers over a plurality of photodiodes in a pixel array, wherein the plurality of grid layers comprises:
a metal layer;
a first dielectric layer on the metal layer, and
a second dielectric layer on first dielectric layer;
forming a pattern layer over the one or more grid layers;
forming a pattern in the pattern layer;
forming a grid structure, above the plurality of photodiodes, comprising:
a first section, comprising the metal layer, having straight sidewalls,
a second section, comprising the first dielectric layer and on the first section, having angled sidewalls; and
a third section, comprising the second dielectric layer and on the second section, having angled sidewalls; and
forming a plurality of color filter regions over the plurality of photodiodes and in openings in between the grid structure.