US 12,439,716 B2
Inverse design of angle sensitive metasurfaces for light field imaging
Wei Wu, Los Angeles, CA (US); Tse-Hsien Ou, Los Angeles, CA (US); Hao Yang, Los Angeles, CA (US); and Yunxiang Wang, Los Angeles, CA (US)
Assigned to University of Southern California, Los Angeles, CA (US)
Filed by UNIVERSITY OF SOUTHERN CALIFORNIA, Los Angeles, CA (US)
Filed on May 28, 2021, as Appl. No. 17/334,196.
Claims priority of provisional application 63/031,273, filed on May 28, 2020.
Prior Publication US 2021/0375961 A1, Dec. 2, 2021
Int. Cl. H10F 39/00 (2025.01); G02B 1/00 (2006.01); G06F 30/398 (2020.01); H04N 13/20 (2018.01); H04N 25/76 (2023.01)
CPC H10F 39/805 (2025.01) [G02B 1/002 (2013.01); G06F 30/398 (2020.01); H04N 13/20 (2018.05); H04N 25/76 (2023.01)] 31 Claims
OG exemplary drawing
 
1. A semiconductor-based sensor to detect one or more light angles of incidence comprising:
a semiconductor light sensor element; and
a patterned spatially inhomogeneous dielectric layer assembly disposed over the semiconductor light sensor element wherein spatial inhomogeneity of the patterned spatially inhomogeneous dielectric layer assembly is optimized to provide a maximized electric field in the semiconductor light sensor element such that the semiconductor-based sensor is configured to detect one or more incident angles of light at a predefined wavelength or wavelengths of light, the patterned spatially inhomogeneous dielectric layer assembly including one or more patterned spatially inhomogeneous dielectric layers, wherein each patterned spatially inhomogeneous dielectric layer includes an array of cells having subsets of cells with a different refractive index.