US 12,439,713 B2
Image sensor device
Chen-Hsiang Hung, Kaohsiung (TW); Chung-Chuan Tseng, Hsinchu (TW); Li-Hsin Chu, New Taipei (TW); and Chia-Ping Lai, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu (TW)
Filed on Aug. 9, 2023, as Appl. No. 18/232,345.
Application 18/232,345 is a continuation of application No. 17/960,028, filed on Oct. 4, 2022, granted, now 11,784,199.
Application 17/960,028 is a continuation of application No. 17/020,454, filed on Sep. 14, 2020, granted, now 11,488,993.
Application 17/020,454 is a continuation of application No. 15/882,894, filed on Jan. 29, 2018, granted, now 10,777,591.
Claims priority of provisional application 62/545,677, filed on Aug. 15, 2017.
Prior Publication US 2024/0055449 A1, Feb. 15, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/80373 (2025.01) [H10F 39/014 (2025.01); H10F 39/807 (2025.01); H10F 39/18 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a photodiode formed in a substrate;
at least one transistor having a gate feature, wherein a first portion of the gate feature extends from a surface of the substrate into the substrate; and
an isolation feature extending into the substrate, wherein the isolation feature surrounds the photodiode and the at least one transistor, wherein at least a portion of the isolation feature directly contacts the first portion of the gate feature of the at least one transistor.