US 12,439,712 B2
Light receiving device, method for manufacturing same, and distance measuring device
Yuji Isogai, Kanagawa (JP); Yusuke Otake, Kanagawa (JP); and Ryota Watanabe, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/920,524
Filed by Sony Semiconductor Solutions Corporation, Kanagawa (JP)
PCT Filed May 27, 2021, PCT No. PCT/JP2021/020122
§ 371(c)(1), (2) Date Oct. 21, 2022,
PCT Pub. No. WO2021/251152, PCT Pub. Date Dec. 16, 2021.
Claims priority of application No. 2020-100622 (JP), filed on Jun. 10, 2020.
Prior Publication US 2023/0154950 A1, May 18, 2023
Int. Cl. H10F 39/18 (2025.01); G01S 7/481 (2006.01); H10F 39/00 (2025.01)
CPC H10F 39/80373 (2025.01) [G01S 7/4816 (2013.01); H10F 39/014 (2025.01); H10F 39/18 (2025.01); H10F 39/802 (2025.01)] 18 Claims
OG exemplary drawing
 
1. A light receiving device comprising a pixel including:
an embedded photodiode having a charge storage layer of a second conductivity type different from a first conductivity type of a photoelectric conversion region in a region in a vicinity of a second surface on an opposite side to a first surface that is a light incident surface of a substrate;
at least two transfer transistors that transfer a charge stored in the photodiode; and
at least one discharge transistor that discharges a charge stored in the photodiode,
wherein the charge storage layer of the second conductivity type is placed to be, in a planar view, surrounded by gates and sidewalls of the transfer transistors, or gates and sidewalls of the transfer transistors and the discharge transistors.