US 12,439,711 B2
Image sensing device with improved transfer transistor
Jong Hwan Shin, Icheon-si (KR)
Assigned to SK HYNIX INC., Icheon-si (KR)
Filed by SK hynix Inc., Icheon-si (KR)
Filed on Jun. 22, 2021, as Appl. No. 17/354,968.
Claims priority of application No. 10-2021-0029831 (KR), filed on Mar. 8, 2021.
Prior Publication US 2022/0285414 A1, Sep. 8, 2022
Int. Cl. H10F 39/00 (2025.01); H10F 39/18 (2025.01)
CPC H10F 39/80373 (2025.01) [H10F 39/18 (2025.01)] 23 Claims
OG exemplary drawing
 
1. An image sensing device comprising:
a substrate including an upper region and a lower region, the substrate including impurities of a first conductivity type;
a photoelectric conversion element structured to convert light into electrical charges and formed in the lower region of the substrate, the photoelectric conversion element including impurities of a second conductivity type impurity opposite to the first conductivity type;
a floating diffusion region formed in the upper region of the substrate and coupled to receive the electrical charges from the photoelectric conversion element, the floating diffusion region including impurities of the second conductivity type; and
a transfer gate formed in the upper region of the substrate adjacent to the floating diffusion region and coupled between the floating diffusion region and the photoelectric conversion element to transfer the electrical charges from the photoelectric conversion element to the floating diffusion region, the transfer gate including a recess electrode structured to have a triangular cross-sectional shape and a triangular planar shape to provide a path for transferring the electrical charges.