	US 12,439,707 B2
	Infrared photodiode and sensor and electronic device
Dong-Seok Leem, Seongnam-si (KR); Ohkyu Kwon, Seoul (KR); Rae Sung Kim, Hwaseong-si (KR); and Insun Park, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Apr. 8, 2022, as Appl. No. 17/716,251.
Claims priority of application No. 10-2021-0083800 (KR), filed on Jun. 28, 2021.
Prior Publication US 2023/0015790 A1, Jan. 19, 2023
Int. Cl. H10F 39/12 (2025.01); H10F 30/222 (2025.01); H10F 39/18 (2025.01); H10F 77/20 (2025.01); H10F 77/40 (2025.01); H10K 30/10 (2023.01); H10K 30/82 (2023.01); H10K 30/87 (2023.01); H10K 30/30 (2023.01); H10K 85/20 (2023.01); H10K 85/60 (2023.01)

CPC H10F 39/193 (2025.01) [H10F 30/222 (2025.01); H10F 39/184 (2025.01); H10F 77/244 (2025.01); H10F 77/413 (2025.01); H10K 30/10 (2023.02); H10K 30/82 (2023.02); H10K 30/87 (2023.02); H10K 30/30 (2023.02); H10K 85/211 (2023.02); H10K 85/655 (2023.02)]

31 Claims

1. An infrared photodiode, comprising:

a first electrode, the first electrode including a reflective layer;

a second electrode, the second electrode facing the first electrode; and

a photoelectric conversion layer between the first electrode and the second electrode, the photoelectric conversion layer including an infrared absorbing material,

wherein a maximum absorption wavelength of the infrared absorbing material in a solution state is greater than about 700 nm and less than or equal to about 950 nm, and

wherein the infrared photodiode is configured to exhibit an external quantum efficiency (EQE) spectrum in a wavelength region of greater than or equal to about 1000 nm.