US 12,439,706 B2
Device over photodetector pixel sensor
Jhy-Jyi Sze, Hsin-Chu (TW); Dun-Nian Yaung, Taipei (TW); and Alexander Kalnitsky, San Francisco, CA (US)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on Jan. 4, 2024, as Appl. No. 18/404,178.
Application 17/355,503 is a division of application No. 16/402,633, filed on May 3, 2019, granted, now 11,063,081, issued on Jul. 13, 2021.
Application 18/404,178 is a continuation of application No. 17/355,503, filed on Jun. 23, 2021, granted, now 11,901,388.
Claims priority of provisional application 62/772,749, filed on Nov. 29, 2018.
Prior Publication US 2024/0162264 A1, May 16, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10F 39/00 (2025.01); H01L 21/762 (2006.01); H10F 39/18 (2025.01); H04N 25/621 (2023.01); H04N 25/79 (2023.01)
CPC H10F 39/026 (2025.01) [H01L 21/76256 (2013.01); H10F 39/014 (2025.01); H10F 39/18 (2025.01); H10F 39/807 (2025.01); H10F 39/811 (2025.01); H04N 25/621 (2023.01); H04N 25/79 (2023.01)] 20 Claims
OG exemplary drawing
 
1. An integrated chip, comprising:
a semiconductor substrate;
a photodetector in the semiconductor substrate;
a transfer transistor bordering the photodetector;
a readout transistor spaced from the semiconductor substrate; and
a conductive structure extending from the readout transistor to the transfer transistor.