US 12,439,702 B2
Electrostatic discharge protection for wireless device
Dolphin Abessolo Bidzo, Nijmegen (NL); Erwin Janssen, Veldhoven (NL); and Erwin Johannes Gerardus Janssen, Meijel (NL)
Assigned to NXP B.V., Eindhoven (NL)
Filed by NXP B.V., Eindhoven (NL)
Filed on May 9, 2022, as Appl. No. 17/739,568.
Prior Publication US 2023/0361110 A1, Nov. 9, 2023
Int. Cl. H03F 1/52 (2006.01); H02H 9/04 (2006.01); H10D 89/60 (2025.01)
CPC H10D 89/911 (2025.01) [H02H 9/046 (2013.01); H03F 1/523 (2013.01); H10D 89/611 (2025.01); H03F 2200/294 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A transceiver, comprising:
a low noise amplifier (LNA) that boosts an input signal;
a high voltage supply terminal in electrical communication with a first terminal of the LNA;
a low voltage supply terminal in electrical communication with a second terminal of the LNA;
a radio frequency (RF) input terminal in electrical communication with a control terminal of the LNA;
an inductor of a bias circuit between the control terminal of the LNA and the low voltage supply terminal; and
an electro-static discharge (ESD) protection system that protects the LNA from an ESD event at one or more of the high voltage supply terminal, the low voltage supply terminal, and the RF input terminal, the ESD protection system comprising:
a primary ESD protection circuit between the RF input terminal and the low voltage supply terminal for shunting a current of the ESD event at the RF input terminal;
a local CDM clamp element including a connector to the inductor, wherein the local CDM clamp element is activated by a voltage of the ESD event received from the inductor to prevent an over-voltage condition from the ESD event at the control terminal of the LNA by generating a clamping voltage that is less than a breakdown voltage of the LNA;
a power supply ESD clamp element between the high voltage supply terminal and the low voltage supply terminal for shunting a current of the ESD event at the high voltage supply terminal; and
a pad inductor having a low DC resistance in series with antiparallel ESD gated diodes connected to the RF input terminal.