US 12,439,687 B2
Organic light emitting display device and method of manufacturing organic light emitting display device
Myounghwa Kim, Seoul (KR); Jaybum Kim, Seoul (KR); Kyoung-seok Son, Seoul (KR); Seungjun Lee, Suwon-si Gyeonggi-do (KR); Seunghun Lee, Seoul (KR); and Jun-hyung Lim, Seoul (KR)
Assigned to Samsung Display Co., Ltd., Yongin-si (KR)
Appl. No. 17/417,632
Filed by Samsung Display Co., Ltd., Yongin-Si (KR)
PCT Filed Mar. 6, 2019, PCT No. PCT/KR2019/002613
§ 371(c)(1), (2) Date Jun. 23, 2021,
PCT Pub. No. WO2020/145450, PCT Pub. Date Jul. 16, 2020.
Claims priority of application No. 10-2019-0003881 (KR), filed on Jan. 11, 2019.
Prior Publication US 2022/0102458 A1, Mar. 31, 2022
Int. Cl. H10D 86/40 (2025.01); H10D 86/00 (2025.01); H10K 59/12 (2023.01); H10K 59/121 (2023.01); H10K 77/10 (2023.01); H10K 102/00 (2023.01); H10D 86/60 (2025.01)
CPC H10D 86/471 (2025.01) [H10K 59/1213 (2023.02); H10D 86/60 (2025.01); H10K 59/1201 (2023.02); H10K 77/111 (2023.02); H10K 2102/311 (2023.02)] 13 Claims
OG exemplary drawing
 
1. An organic light emitting display device comprising:
a substrate having a light emitting region that includes a first region and a second region, a peripheral region that surrounds the light emitting region, and a bending region that is disposed in one side of the peripheral region;
a first transistor, the first transistor including:
a first active layer having a source region and a drain region disposed in the first region on the substrate,
a first gate electrode disposed on the first active layer with a gate insulating layer disposed between the first active layer and the first gate electrode,
a first source electrode disposed on the first gate electrode with a first insulating interlayer disposed between the first gate electrode and the first source electrode, the first source electrode being connected to the source region,
a sacrificial layer structure disposed to be spaced apart from the first source electrode, the sacrificial layer structure having an opening,
a protective insulating layer disposed on the first source electrode and the sacrificial layer structure, and
a first drain electrode disposed on the protective insulating layer, the first drain electrode being connected to the drain region through a contact hole including the opening, and
a sub-pixel structure disposed on the first transistor,
wherein a groove exposing the bending region of the substrate is formed without creating a step, and
wherein the groove is formed from a same layer toward the substrate as the contact hole and further includes a removed part of the substrate, and a height of the contact hole is less than a height of the groove.