US 12,439,686 B2
Crystalline p-type semiconductor film and thin film transistor and diode and electronic device
Jun Hyuk Cheon, Seoul (KR)
Assigned to ADRC. CO. KR, Seoul (KR)
Filed by ADRC. CO. KR, Seoul (KR)
Filed on Oct. 13, 2022, as Appl. No. 17/965,014.
Claims priority of application No. 10-2021-0188967 (KR), filed on Dec. 27, 2021.
Prior Publication US 2023/0207579 A1, Jun. 29, 2023
Int. Cl. H10D 86/01 (2025.01); H10D 30/67 (2025.01); H10D 86/40 (2025.01); H10D 86/60 (2025.01)
CPC H10D 86/0227 (2025.01) [H10D 30/6731 (2025.01); H10D 30/6739 (2025.01); H10D 30/6745 (2025.01); H10D 30/6755 (2025.01); H10D 86/421 (2025.01); H10D 86/60 (2025.01)] 14 Claims
OG exemplary drawing
 
1. A crystalline p-type semiconductor film, the crystalline p-type semiconductor film having a plurality of crystal grains with an average grain size of submicron, wherein the crystalline p-type semiconductor film comprises tin-doped copper(I) iodide, a size of the plurality of crystal grains is distributed within the range of greater than about 0 nm and less than or equal to about 100 nm, and the ratio of tin to the total content of the tin-doped copper(I) iodide is about 22 wt % to about 28 wt %.