US 12,439,682 B2
Monolithic high side gallium nitride device with integrated capacitive level shifter circuits
Marco Giandalia, Marina Del Rey, CA (US); Santosh Sharma, Austin, TX (US); Jung Hee Lee, Rolling Hills Estates, CA (US); and Daniel M. Kinzer, El Segundo, CA (US)
Assigned to Navitas Semiconductor Limited, Dublin (IE)
Filed by Navitas Semiconductor Limited, Dublin (IE)
Filed on Nov. 1, 2022, as Appl. No. 18/051,799.
Claims priority of provisional application 63/263,439, filed on Nov. 2, 2021.
Prior Publication US 2023/0139736 A1, May 4, 2023
Int. Cl. H02M 1/08 (2006.01); H02M 3/00 (2006.01); H10D 84/01 (2025.01); H10D 84/80 (2025.01)
CPC H10D 84/811 (2025.01) [H02M 1/08 (2013.01); H02M 3/003 (2021.05); H10D 84/01 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A power converter comprising:
a GaN-based die;
a switch formed on the GaN-based die and having a gate terminal, a source terminal and a drain terminal, wherein the switch is arranged to be selectively conductive according to a driver signal applied to the gate terminal;
a buffer circuit formed on the GaN-based die and arranged to receive an input signal and generate a corresponding differential output signal at a first output terminal and at a second output terminal; and
a voltage level converter formed on the GaN-based die and having a first input terminal coupled to the first output terminal via a first capacitor and having a second input terminal coupled to the second output terminal via a second capacitor, and wherein the first and second capacitors are formed on the GaN-based die, and wherein an output terminal of the voltage level converter is coupled to the gate terminal and arranged to generate the driver signal.