US 12,439,681 B2
Semiconductor device and method for fabricating the same
Ching-Ling Lin, Kaohsiung (TW); Wen-An Liang, Tainan (TW); and Chen-Ming Huang, Taipei (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Mar. 22, 2024, as Appl. No. 18/613,151.
Application 16/859,959 is a division of application No. 15/859,775, filed on Jan. 2, 2018, granted, now 10,679,903, issued on Jun. 9, 2020.
Application 18/613,151 is a continuation of application No. 18/088,631, filed on Dec. 26, 2022, granted, now 11,972,984.
Application 18/088,631 is a continuation of application No. 16/859,959, filed on Apr. 27, 2020, granted, now 11,569,133, issued on Jan. 31, 2023.
Claims priority of application No. 201711262580.1 (CN), filed on Dec. 4, 2017.
Prior Publication US 2024/0282637 A1, Aug. 22, 2024
Int. Cl. H01L 21/02 (2006.01); H01L 21/764 (2006.01); H10D 30/01 (2025.01); H10D 30/62 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 84/038 (2025.01) [H01L 21/764 (2013.01); H10D 30/024 (2025.01); H10D 30/62 (2025.01); H10D 62/115 (2025.01); H10D 64/017 (2025.01); H10D 84/0151 (2025.01); H10D 84/0158 (2025.01); H10D 84/834 (2025.01)] 10 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a fin-shaped structure on a substrate;
a gate structure on the fin-shaped structure and an interlayer dielectric (ILD) layer around the gate structure;
an epitaxial layer adjacent to the gate structure;
a single diffusion break (SDB) structure in the ILD layer and the fin-shaped structure, wherein the SDB structure comprises:
a bottom portion comprising a first width and a second width, wherein a top surface of the bottom portion is higher than a top surface of the epitaxial layer; and
a top portion on the bottom portion, wherein the top portion comprise a third width and a top surface of the bottom portion is higher than a top surface of the fin-shaped structure.