US 12,439,680 B2
Multi-gate device and related methods
Kuan-Ting Pan, Taipei (TW); Zhi-Chang Lin, Hsinchu County (TW); Yi-Ruei Jhan, Keelung (TW); Chih-Hao Wang, Hsinchu County (TW); Huan-Chieh Su, Changhua County (TW); Shi Ning Ju, Hsinchu (TW); and Kuo-Cheng Chiang, Hsinchu County (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Dec. 1, 2023, as Appl. No. 18/526,839.
Application 18/526,839 is a continuation of application No. 17/662,569, filed on May 9, 2022, granted, now 11,854,908.
Application 17/662,569 is a continuation of application No. 16/947,398, filed on Jul. 30, 2020, granted, now 11,328,963, issued on May 10, 2022.
Claims priority of provisional application 62/982,329, filed on Feb. 27, 2020.
Prior Publication US 2024/0112959 A1, Apr. 4, 2024
Int. Cl. H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 21/311 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10D 30/01 (2025.01); H10D 30/67 (2025.01); H10D 62/00 (2025.01); H10D 62/10 (2025.01); H10D 64/01 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H10D 84/038 (2025.01) [H01L 21/02603 (2013.01); H01L 21/31111 (2013.01); H10D 30/0215 (2025.01); H10D 30/031 (2025.01); H10D 30/6713 (2025.01); H10D 30/6729 (2025.01); H10D 30/6735 (2025.01); H10D 30/6757 (2025.01); H10D 30/6758 (2025.01); H10D 62/021 (2025.01); H10D 62/115 (2025.01); H10D 62/121 (2025.01); H10D 64/017 (2025.01); H10D 84/0167 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/0188 (2025.01); H10D 84/85 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method of fabricating a semiconductor device, comprising:
forming a first dielectric-filled trench within a first part of a dummy gate, wherein the first dielectric-filled trench interposes first and second device regions and contacts respective first and second hybrid fins disposed between the dielectric-filled trench and each of the first and second device regions; and
forming a metal layer within a second part of the dummy gate;
wherein top surfaces of the first and second hybrid fins are substantially level with each other and extend above a top surface of the metal layer.