| CPC H10D 64/513 (2025.01) [H01L 21/28 (2013.01); H01L 23/522 (2013.01); H10D 30/66 (2025.01); H10D 64/517 (2025.01)] | 17 Claims |
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1. A semiconductor device, comprising:
a first electrode;
a semiconductor member, the semiconductor member including a first semiconductor region of a first conductivity type, a second semiconductor region of a second conductivity type, and a third semiconductor region of the first conductivity type,
the first semiconductor region being between the first electrode and the third semiconductor region, the first semiconductor region including a first partial region, a second partial region, and a third partial region,
the second semiconductor region being between the first semiconductor region and the third semiconductor region,
the third semiconductor region including a first semiconductor portion and a second semiconductor portion, a second direction from the first semiconductor portion to the second semiconductor portion crossing a first direction from the first electrode to the third semiconductor region,
the second semiconductor region including a third semiconductor portion and a fourth semiconductor portion, a direction from the third semiconductor portion to the fourth semiconductor portion being along the second direction,
the third semiconductor portion being between the first partial region and the first semiconductor portion in the first direction,
the fourth semiconductor portion being between the second partial region and the second semiconductor portion in the first direction,
a position of the third partial region in the second direction being between a position of the first partial region in the second direction and a position of the second partial region in the second direction;
a second electrode electrically connected with the third semiconductor region;
a third electrode including a first electrode portion, the first electrode portion being between the first semiconductor portion and the second semiconductor portion, and between the third semiconductor portion and the fourth semiconductor portion in the second direction;
a first conductive member including a first conductive region, a second conductive region, and a third conductive region, the first conductive region being between the first partial region and the second partial region in the second direction, a position of the first conductive region in the first direction being between a position of the third partial region in the first direction and a position of the first electrode portion in the first direction, the second conductive region being between the first conductive region and the third conductive region in a third direction crossing a plane including the first direction and the second direction;
a connecting member electrically connected with the first conductive member, a direction from the third conductive region to the connecting member being along the first direction;
a first member provided between the first electrode portion and the connecting member in the third direction, a position of the second conductive region in the first direction being between a position of the third partial region in the first direction and a position of the first member in the first direction, the first member including an element different from an element included in the second conductive region; and
an insulating member provided between the semiconductor member and the third electrode, between the semiconductor member and the first conductive member, and between the first conductive member and the first member.
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