| CPC H10D 64/513 (2025.01) [H10D 64/01 (2025.01); H10D 64/667 (2025.01); H10D 84/83 (2025.01); H10D 64/117 (2025.01)] | 12 Claims |
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1. A semiconductor power device, comprising:
a semiconductor body in which a transistor device is formed;
a source region of the transistor device at a frontside of the semiconductor body;
a drain region of the transistor device at a backside of the semiconductor body;
a gate region of the transistor device; and
a channel region of the transistor device laterally aside the gate region and vertically between the source region and the drain region,
wherein in an upper part of the gate region that laterally adjoins both the source region and the channel region, the gate region comprises a gate electrode for controlling a channel formation in the channel region, and a gate dielectric laterally between the channel region and the gate electrode,
wherein the gate electrode comprises a gate electrode bulk region and a gate electrode layer laterally between the gate dielectric and the gate electrode bulk region,
wherein the gate electrode layer comprises titanium nitride, titanium, titanium tungsten, tungsten, or cobalt,
wherein the gate electrode layer is doped with at least one doping agent selected from the group consisting of: fluorine; nitrogen; carbon; aluminum; oxygen; and hydrogen,
wherein the gate electrode bulk region comprises doped polysilicon.
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