| CPC H10D 64/254 (2025.01) [H01L 23/481 (2013.01); H10D 1/694 (2025.01); H10D 30/015 (2025.01); H10D 30/475 (2025.01); H10D 64/01 (2025.01); H10D 64/257 (2025.01); H10D 62/8503 (2025.01); H10D 62/854 (2025.01)] | 9 Claims |
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1. A semiconductor device, comprising:
a semiconductor substrate;
a first semiconductor layer provided on the semiconductor substrate;
a second semiconductor layer provided on the first semiconductor layer;
a first electrode provided on the second semiconductor layer;
a second electrode provided to be arranged with the first electrode along a front surface of the second semiconductor layer;
a third electrode provided between the first electrode and the second electrode on the second semiconductor layer;
a metal layer provided on a back surface of the semiconductor substrate at a side opposite to the first semiconductor layer; and
a conductor extending inside the semiconductor substrate,
the conductor electrically connecting the first electrode and the metal layer via the second semiconductor layer,
the second semiconductor layer including
a first region including a first-conductivity-type impurity, and
a second region including a first-conductivity-type impurity with a higher concentration than the first-conductivity-type impurity of the first region,
the second region of the second semiconductor layer being provided between the conductor and the first electrode.
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