| CPC H10D 64/252 (2025.01) [H10D 30/0297 (2025.01); H10D 30/668 (2025.01); H10D 62/83 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01)] | 5 Claims |
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1. A semiconductor device comprising:
a semiconductor substrate;
an interlayer insulation film located on the semiconductor substrate, the interlayer insulation film having a contact hole; and
an electrode located on the semiconductor substrate, the electrode electrically connected to the semiconductor substrate through the contact hole,
wherein the electrode includes:
an embedded portion located at the contact hole;
a lower metal layer located above the interlayer insulation film at a side closer to the semiconductor substrate and electrically connected to the embedded portion;
an upper metal layer located above the lower metal layer; and
an intermediate layer located between the lower metal layer and the upper metal layer,
wherein each of the lower metal layer and the upper metal layer is made of aluminum or an aluminum alloy in which an element is added to aluminum,
wherein the intermediate layer is made of material that is more difficult to react with a hydroxyl group than the upper metal layer and the lower metal layer,
wherein the intermediate layer is configured such that a distance between the semiconductor substrate and the intermediate layer is constant along a planar direction of the semiconductor substrate, and
wherein the embedded portion is made of a tungsten plug.
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