US 12,439,669 B2
Co-deposition of titanium and silicon for improved silicon germanium source and drain contacts
Debaleena Nandi, Hillsboro, OR (US); Chi-Hing Choi, Portland, OR (US); Gilbert Dewey, Beaverton, OR (US); Harold Kennel, Portland, OR (US); Omair Saadat, Portland, OR (US); Jitendra Kumar Jha, Hillsboro, OR (US); Adedapo Oni, North Plains, OR (US); Nazila Haratipour, Portland, OR (US); Anand Murthy, Portland, OR (US); and Tahir Ghani, Portland, OR (US)
Assigned to Intel Corporation, Santa Clara, CA (US)
Filed by Intel Corporation, Santa Clara, CA (US)
Filed on Jun. 25, 2021, as Appl. No. 17/358,436.
Prior Publication US 2022/0416032 A1, Dec. 29, 2022
Int. Cl. H10D 64/23 (2025.01); H01L 21/28 (2006.01); H01L 21/768 (2006.01); H10D 62/832 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/83 (2025.01)
CPC H10D 64/251 (2025.01) [H01L 21/28 (2013.01); H01L 21/76889 (2013.01); H10D 62/832 (2025.01); H10D 84/013 (2025.01); H10D 84/038 (2025.01); H10D 84/83 (2025.01)] 20 Claims
OG exemplary drawing
 
1. An apparatus, comprising:
a channel region between a source and a drain, the source and the drain each comprising silicon and germanium;
a gate electrode adjacent to the channel region; and
a contact comprising a contact layer on at least one of the source or the drain, the contact layer comprising titanium, silicon, and germanium comprising a germanium concentration of not more than 5% at any position through a thickness of the contact layer.