US 12,439,653 B2
Multi-layer hybrid edge termination for III-N power devices
Travis J. Anderson, Alexandria, DC (US); Mona A. Ebrish, Alexandria, VA (US); Andrew D. Koehler, Alexandria, VA (US); Alan G. Jacobs, Rockville, MD (US); Matthew A. Porter, Virginia Beach, VA (US); Karl D. Hobart, Alexandria, VA (US); Prakash Pandey, Toledo, OH (US); Tolen Michael Nelson, Tecumseh, MI (US); Daniel G. Georgiev, Canton, MI (US); Raghav Khanna, Toledo, OH (US); and Michael Robert Hontz, Drexel Hill, PA (US)
Assigned to The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed by The Government of the United States of America, as represented by the Secretary of the Navy, Arlington, VA (US)
Filed on Jul. 28, 2022, as Appl. No. 17/876,163.
Claims priority of provisional application 63/227,364, filed on Jul. 30, 2021.
Prior Publication US 2023/0030549 A1, Feb. 2, 2023
Int. Cl. H10D 62/10 (2025.01); H10D 8/00 (2025.01); H10D 62/85 (2025.01)
CPC H10D 62/105 (2025.01) [H10D 8/00 (2025.01); H10D 62/8503 (2025.01)] 11 Claims
OG exemplary drawing
 
1. A hybrid edge termination structure in a semiconductor device, comprising:
a first layer, a third layer, and a second layer between the first and the third layers;
the first layer formed from a III-nitride semiconductor material having a first doping type and a first charge concentration N1;
the third layer formed from the III-nitride semiconductor material having a second doping type different from the first doping type and having a second charge concentration N2; and
the second layer comprising a plurality of alternating first and second lateral regions in contact with both the first layer and the third layer, wherein the first lateral regions are comprised of the III-nitride semiconductor material at the first doping type and the first charge concentration N1, and the second lateral regions are comprised of the III-nitride semiconductor material at the second doping type and the second charge concentration N2.