| CPC H10D 30/6755 (2025.01) [H10D 30/673 (2025.01); H10D 86/423 (2025.01); H10D 86/60 (2025.01)] | 20 Claims |
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1. A semiconductor device, comprising:
an oxide semiconductor layer on a substrate, the oxide semiconductor layer including
a first part and a pair of second parts, and
each of the second parts of the pair of second parts are spaced apart from each other across the first part;
a gate electrode on the first part of the oxide semiconductor layer; and
a pair of electrodes on corresponding second parts of the pair of second parts,
wherein a first thickness of the first part of the oxide semiconductor layer is less than a second thickness of each of the second parts, and
a concentration of oxygen vacancies in the first part of the oxide semiconductor layer is less than a concentration of oxygen vacancies in each of the second parts,
wherein a bottom surface of the first part is at a same height as that of a bottom surface of each of the second parts, and
wherein the oxide semiconductor layer is a single layer including of one or more of amorphous oxide semiconductor, crystalline oxide semiconductor and polycrystalline oxide semiconductor.
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