US 12,439,643 B2
Fin shape modification
Ssu-Yu Liao, Hsinchu (TW); Ta-Wei Lin, Hsinchu (TW); Tsu-Hui Su, Taipei (TW); Chun-Hsiang Fan, Hsinchu (TW); Ming-Hsi Yeh, Hsinchu (TW); and Kuo-Bin Huang, Jhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Aug. 2, 2022, as Appl. No. 17/879,638.
Prior Publication US 2024/0047545 A1, Feb. 8, 2024
Int. Cl. H10D 30/67 (2025.01); H01L 21/306 (2006.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01)
CPC H10D 30/6735 (2025.01) [H01L 21/306 (2013.01); H10D 30/021 (2025.01); H10D 30/6757 (2025.01); H10D 62/121 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming, on a substrate, a first fin having a bottom portion and a top portion;
forming, on the substrate and adjacent to the first fin, a second fin having a bottom portion and a top portion;
depositing an insulating material to cover the bottom portion of the first fin and the bottom portion of the second fin;
isotropically etching the top portion of the first fin laterally using an etching process while a width of the top portion of the second fin remains substantially constant;
forming a gate around the top portion of the first fin and the top portion of the second fin; and
forming source/drain regions adjacent to the gate.