US 12,439,642 B2
Seam-top seal for dielectrics
Kuei-Lin Chan, Hsinchu (TW); Fu-Ting Yen, Hsinchu (TW); Yu-Yun Peng, Hsinchu (TW); and Keng-Chu Lin, Ping-Tung (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 6, 2022, as Appl. No. 17/833,803.
Prior Publication US 2023/0395683 A1, Dec. 7, 2023
Int. Cl. H10D 30/67 (2025.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H10D 30/01 (2025.01); H10D 62/10 (2025.01)
CPC H10D 30/6735 (2025.01) [H01L 21/0226 (2013.01); H01L 21/30604 (2013.01); H10D 30/024 (2025.01); H10D 30/6748 (2025.01); H10D 62/119 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
depositing, onto a semiconductor substrate, a dielectric layer having a surface structure comprising methanide (CH3) radicals bonded to silicon atoms;
applying a pre-treatment to convert the CH3 radicals to amino (NH2) radicals;
applying a conversion treatment to convert the NH2 radicals to hydroxide (OH) radicals;
applying a dehydration treatment to remove water molecules from the surface structure; and
cross-linking remaining oxygen atoms between adjacent silicon atoms.