US 12,439,628 B2
Two-dimensional electron gas charge density control
Pil Sung Park, Redondo Beach, CA (US)
Assigned to Navitas Semiconductor Limited, Dublin (IE)
Filed by Navitas Semiconductor Limited, Dublin (IE)
Filed on Jun. 21, 2022, as Appl. No. 17/845,756.
Claims priority of provisional application 63/213,655, filed on Jun. 22, 2021.
Prior Publication US 2022/0406927 A1, Dec. 22, 2022
Int. Cl. H10D 30/47 (2025.01); H10D 30/01 (2025.01); H10D 62/85 (2025.01)
CPC H10D 30/475 (2025.01) [H10D 30/015 (2025.01); H10D 62/8503 (2025.01)] 19 Claims
OG exemplary drawing
 
1. A gallium nitride (GaN) device comprising:
a compound semiconductor substrate;
a source region formed in the compound semiconductor substrate;
a drain region formed in the compound semiconductor substrate and separated from the source region;
a two-dimensional electron gas (2DEG) layer formed in the compound semiconductor substrate and extending between the source region and the drain region;
a gate region formed on the compound semiconductor substrate and positioned between the source region and the drain region; and
a plurality of isolated charge control structures disposed between the gate region and the drain region; and
wherein the plurality of isolated charge control structures are not in direct contact with the gate region.