US 12,439,623 B2
Field effect transistors with dual silicide contact structures
Peng-Wei Chu, Hsinchu (TW); Yasutoshi Okuno, Hsinchu (TW); Ding-Kang Shih, New Taipei (TW); and Sung-Li Wang, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Nov. 21, 2023, as Appl. No. 18/516,410.
Application 17/582,292 is a division of application No. 16/721,352, filed on Dec. 19, 2019, granted, now 11,233,134, issued on Jan. 25, 2022.
Application 18/516,410 is a continuation of application No. 17/582,292, filed on Jan. 24, 2022, granted, now 11,855,177.
Prior Publication US 2024/0088261 A1, Mar. 14, 2024
This patent is subject to a terminal disclaimer.
Int. Cl. H10D 30/01 (2025.01); H01L 21/02 (2006.01); H10D 62/13 (2025.01); H10D 62/822 (2025.01); H10D 64/01 (2025.01); H10D 64/62 (2025.01); H10D 84/01 (2025.01); H10D 84/03 (2025.01); H10D 84/85 (2025.01)
CPC H10D 30/0212 (2025.01) [H01L 21/0206 (2013.01); H01L 21/02236 (2013.01); H01L 21/02532 (2013.01); H10D 62/151 (2025.01); H10D 62/822 (2025.01); H10D 64/017 (2025.01); H10D 64/021 (2025.01); H10D 64/62 (2025.01); H10D 84/017 (2025.01); H10D 84/0186 (2025.01); H10D 84/0193 (2025.01); H10D 84/038 (2025.01); H10D 84/853 (2025.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
forming first and second fin structures on a substrate;
forming first and second source/drain (S/D) regions on the first and second fin structures, respectively;
forming first and second contact openings simultaneously on the first and second S/D regions, respectively, to expose surfaces of the first and second S/D regions;
selectively forming an oxide capping layer on the exposed surfaces of the second S/D region within the second contact opening;
forming a metal silicide layer on the exposed surfaces of the first S/D region within the first contact opening;
removing the oxide capping layer; and
forming a conductive region on the exposed surfaces of the second S/D region within the second contact opening.