| CPC H10D 12/038 (2025.01) [H10D 30/668 (2025.01); H10D 30/669 (2025.01); H10D 62/127 (2025.01); H10D 62/152 (2025.01); H10D 62/393 (2025.01); H10D 64/117 (2025.01)] | 4 Claims |
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1. A semiconductor device comprising:
a cell portion having a semiconductor element; and
a peripheral portion surrounding the cell portion, wherein
the semiconductor element in the cell portion includes:
a drift layer being a first conductivity type;
a first impurity region located on the drift layer and being a second conductivity type;
a second impurity region located at a surface layer portion of the first impurity region inside the first impurity region, the second impurity region being the first conductivity type and having a higher impurity concentration than the drift layer;
a plurality of trench-gate structures arranged in a stripe shape, each of the plurality of trench-gate structures including a gate trench, a shield electrode, an intermediate insulating film, a gate electrode, and an insulating film, the gate trench having one direction as a longitudinal direction of the gate trench while penetrating the first impurity region from the second impurity region and reaching the drift layer, each of the plurality of trench-gate structures configured to have double gates by stacking the shield electrode, the intermediate insulating film and the gate electrode in order via the insulating film in the gate trench;
a high-concentration layer being the first conductivity type or the second conductivity type, the high-concentration layer located on a side opposite from the first impurity region with the drift layer sandwiched between the first impurity region and the high-concentration layer;
an interlayer insulating film located on each of the plurality of trench-gate structures, the first impurity region and the second impurity region, the interlayer insulating film having a first contact hole communicating with the first impurity region and the second impurity region;
a first electrode electrically connected to the first impurity region and the second impurity region through the first contact hole; and
a second electrode electrically connected to the high-concentration layer,
the first impurity region extends from the cell portion to the peripheral portion,
the peripheral portion has a section facing the cell portion in the one direction,
the interlayer insulating film further has a second contact hole at the section of the peripheral portion,
the second contact hole exposes the first impurity region, and
the first electrode is electrically connected to the first impurity region through the second contact hole in the peripheral portion.
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