US 12,439,619 B2
Cascaded bipolar junction transistor and methods of forming the same
Hong-Shyang Wu, Taipei (TW); and Kuo-Ming Wu, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jun. 13, 2022, as Appl. No. 17/838,894.
Prior Publication US 2023/0402532 A1, Dec. 14, 2023
Int. Cl. H10D 10/60 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 64/23 (2025.01); H10D 64/27 (2025.01); H10D 84/60 (2025.01)
CPC H10D 10/60 (2025.01) [H10D 62/133 (2025.01); H10D 62/137 (2025.01); H10D 62/177 (2025.01); H10D 64/231 (2025.01); H10D 64/281 (2025.01); H10D 84/645 (2025.01)] 20 Claims
OG exemplary drawing
 
1. A device, comprising:
a substrate;
a first bipolar junction transistor (BJT) disposed over the substrate, the first BJT comprising:
a first base region;
a first emitter region; and
a first collector region;
a second BJT disposed over the substrate adjacent the first BJT, the second BJT comprising:
a second base region;
a second emitter region; and
a second collector region;
a first isolation region surrounding the first BJT;
a second isolation region surrounding the second BJT; and
an interconnect structure disposed over the first and second BJTs, wherein the interconnect structure comprises:
a first conductive line electrically connected to the first emitter region and the second base region; and
a second conductive line electrically connected to the first collector region and the second collector region, wherein the second conductive line comprises a first portion, a second portion parallel to the first portion, and a third portion connecting the first and second portions, the first portion is disposed directly over the first collector region and the first isolation region, and the second portion is disposed directly over the second collector region and the second isolation region.