US 12,439,618 B2
Bipolar junction transistors including emitter-base and base-collector superlattices
Richard Burton, Phoenix, AZ (US)
Assigned to ATOMERA INCORPORATED, Los Gatos, CA (US)
Filed by ATOMERA INCORPORATED, Los Gatos, CA (US)
Filed on Nov. 27, 2023, as Appl. No. 18/520,131.
Application 17/873,426 is a division of application No. 16/913,546, filed on Jun. 26, 2020, granted, now 11,437,487, issued on Sep. 6, 2022.
Application 18/520,131 is a continuation of application No. 17/873,426, filed on Jul. 26, 2022, granted, now 11,923,431.
Claims priority of provisional application 62/960,851, filed on Jan. 14, 2020.
Prior Publication US 2024/0097003 A1, Mar. 21, 2024
Int. Cl. H10D 10/01 (2025.01); H10D 10/40 (2025.01); H10D 62/13 (2025.01); H10D 62/17 (2025.01); H10D 62/815 (2025.01)
CPC H10D 10/051 (2025.01) [H10D 10/40 (2025.01); H10D 62/137 (2025.01); H10D 62/177 (2025.01); H10D 62/8162 (2025.01)] 16 Claims
OG exemplary drawing
 
1. A bipolar junction transistor (BJT) comprising:
a silicon substrate defining a collector region therein;
a first superlattice on the silicon substrate comprising a plurality of stacked groups of first layers, each group of first layers comprising a first plurality of stacked base silicon monolayers defining a first base semiconductor portion, and at least one first non-semiconductor monolayer constrained within a crystal lattice of adjacent first base silicon portions;
a silicon-germanium (SiGe) base on the first superlattice; and
an emitter on the SiGe base.