US 12,439,610 B2
Memory devices
Segab Kwon, Seoul (KR); Hyoshin Ahn, Seoul (KR); Daesin Kim, Suwon-si (KR); and Inkook Jang, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 25, 2022, as Appl. No. 17/872,634.
Claims priority of application No. 10-2021-0105480 (KR), filed on Aug. 10, 2021.
Prior Publication US 2023/0048180 A1, Feb. 16, 2023
Int. Cl. H10B 63/00 (2023.01)
CPC H10B 63/24 (2023.02) [H10B 63/84 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A memory device comprising:
a plurality of first conductive lines on a substrate and extending in a first direction;
a plurality of second conductive lines on the plurality of first conductive lines and extending in a second direction intersecting the first direction; and
a plurality of memory cells respectively between the plurality of first conductive lines and the plurality of second conductive lines,
wherein each of the plurality of memory cells comprises a switching element and a variable resistance material layer, and
wherein the switching element comprises a material having a composition of [GeX PY SeZ](1-W) [O]W, where 0.15≤X≤0.50, 0.15≤Y≤0.50, 0.35≤Z≤0.70, and 0.01≤W≤0.10.