US 12,439,607 B2
Inspection device
Kenji Suzuki, Yokohama (JP); Ingi Kim, Suwon-si (KR); Mitsunori Numata, Yokohama (JP); Shinji Ueyama, Yokohama (JP); and Tomoki Onishi, Yokohama (JP)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Dec. 8, 2023, as Appl. No. 18/533,528.
Claims priority of application No. 2022-200858 (JP), filed on Dec. 16, 2022; and application No. 10-2023-0031569 (KR), filed on Mar. 10, 2023.
Prior Publication US 2024/0201104 A1, Jun. 20, 2024
Int. Cl. G01R 33/02 (2006.01); G01R 13/40 (2006.01); G01R 31/302 (2006.01); G01R 33/00 (2006.01); G01R 33/032 (2006.01); H01F 7/06 (2006.01); H10B 61/00 (2023.01)
CPC H10B 61/00 (2023.02) [G01R 13/40 (2013.01); G01R 31/302 (2013.01); G01R 33/0005 (2013.01); G01R 33/0325 (2013.01); H01F 7/06 (2013.01); H01F 2007/062 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An inspection device comprising:
a stage having a stage surface and fixing a magnetoresistive random access memory (MRAM) element on the stage surface;
a plurality of electromagnets generating a first magnetic field in which a direction of a magnetic field component in a vertical direction, perpendicular to the stage surface, changes from a first direction to a second direction, opposite to the first direction, according to a position on the stage surface, and a second magnetic field in which a direction of a magnetic field component in an in-plane direction, parallel to the stage surface, changes from a third direction to a fourth direction, opposite to the third direction, according to the position on the stage surface;
an optical system illuminating the MRAM element with illumination light including polarized light, and simultaneously condensing reflected light from which the illumination light is reflected from the MRAM element; and
a detector detecting the reflected light when the position of the MRAM element in the first magnetic field is changed, and the reflected light when the position of the MRAM element in the second magnetic field is changed.