US 12,439,600 B2
Semiconductor devices and data storage systems including the same
Yoonhwan Son, Seoul (KR); Miso Kim, Suwon-si (KR); Joongshik Shin, Yongin-si (KR); and Minjae Oh, Hwaseong-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Dec. 9, 2022, as Appl. No. 18/063,878.
Claims priority of application No. 10-2022-0012662 (KR), filed on Jan. 27, 2022.
Prior Publication US 2023/0240073 A1, Jul. 27, 2023
Int. Cl. H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 41/40 (2023.01); H10B 41/50 (2023.01); H10B 43/40 (2023.01); H10B 43/50 (2023.01); H10D 64/01 (2025.01)
CPC H10B 43/27 (2023.02) [H10B 41/27 (2023.02); H10B 41/40 (2023.02); H10B 41/50 (2023.02); H10B 43/40 (2023.02); H10B 43/50 (2023.02); H10D 64/037 (2025.01); H01L 2223/54426 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a substrate having a first region and a second region;
a first stack structure in the first region, the first stack structure including lower gate electrodes spaced apart from each other and stacked in a first direction, the first direction perpendicular to an upper surface of the substrate;
a first channel structure penetrating through the first stack structure and in contact with the substrate;
a second stack structure on the first stack structure and the first channel structure, the second stack structure including upper gate electrodes spaced apart from each other and stacked in the first direction;
a second channel structure penetrating through the second stack structure and connected to the first channel structure;
a first molding structure in the second region, the first molding structure including lower horizontal sacrificial layers spaced apart from each other and stacked in the first direction;
a first alignment structure penetrating through the first molding structure and in contact with the substrate;
a second molding structure on the first molding structure and the first alignment structure, the second molding structure including upper horizontal sacrificial layers spaced apart from each other and stacked in the first direction;
a second alignment structure penetrating through the second molding structure and connected to the first alignment structure; and
a protective layer between the first molding structure and the second molding structure,
wherein among the upper horizontal sacrificial layers, a lowermost first horizontal sacrificial layer has an upper surface on a first level on the first alignment structure, a second level on the first molding structure of a periphery of the first alignment structure, and a third level on the protective layer, the second level is lower than the first level, and the third level is higher than the first level.