US 12,439,599 B2
Semiconductor memory device
Hikari Tajima, Tokyo (JP); Masayuki Kitamura, Yokkaichi Mie (JP); and Seiichi Omoto, Yokkaichi Mie (JP)
Assigned to Kioxia Corporation, Tokyo (JP)
Filed by Kioxia Corporation, Tokyo (JP)
Filed on Sep. 14, 2022, as Appl. No. 17/931,923.
Claims priority of application No. 2022-015650 (JP), filed on Feb. 3, 2022.
Prior Publication US 2023/0247833 A1, Aug. 3, 2023
Int. Cl. H01L 27/1157 (2017.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 43/35 (2023.01)
CPC H10B 43/27 (2023.02) [H10B 43/10 (2023.02); H10B 43/35 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor memory device comprising:
a stacked body in which a plurality of conductive layers containing molybdenum (Mo) are stacked to be spaced apart from each other in a first direction;
a pillar structure including a semiconductor layer extending in the first direction in the stacked body;
a partition structure extending in the first direction and in a second direction intersecting the first direction in the stacked body, and dividing the stacked body in a third direction intersecting the first and second directions; and
a plurality of intermediate layers, each including a portion provided between the pillar structure and a corresponding one of the conductive layers, and containing a compound of molybdenum (Mo) and boron (B).