US 12,439,592 B2
Methods of forming microelectronic devices, and related microelectronic devices, memory devices, and electronic systems
Kunal R. Parekh, Boise, ID (US); and Angela S. Parekh, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Oct. 13, 2021, as Appl. No. 17/500,773.
Prior Publication US 2023/0110367 A1, Apr. 13, 2023
Int. Cl. H10B 43/20 (2023.01); G11C 5/06 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10D 30/63 (2025.01)
CPC H10B 41/27 (2023.02) [G11C 5/06 (2013.01); H01L 21/76802 (2013.01); H10B 43/27 (2023.02); H10D 30/63 (2025.01)] 15 Claims
OG exemplary drawing
 
1. A microelectronic device, comprising:
a stack structure overlying control logic circuitry and including:
a first section comprising conductive structures and insulative structures vertically alternating with the conductive structures; and
a second section horizontally neighboring the first section, the second section comprising the insulative structures and further insulative structures vertically alternating with the insulative structures;
a source structure interposed between the control logic circuitry and the stack structure;
conductive line structures overlying the stack structure; and
contact structures extending through the stack structure and the source structure and coupled to the control logic circuitry, at least one of the contact structures extending through the second section of the stack structure and comprising:
an upper region extending through the stack structure and the source structure; and
a lower region underlying the source structure and having a horizontal cross-sectional area greater than that of the upper region.