US 12,439,587 B2
Semiconductor device having an air gap surrounding a portion of a conductive contact layer
Junhyeok Ahn, Suwon-si (KR); and Kiseok Lee, Suwon-si (KR)
Assigned to Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Sep. 26, 2022, as Appl. No. 17/953,054.
Claims priority of application No. 10-2022-0051998 (KR), filed on Apr. 27, 2022.
Prior Publication US 2024/0107743 A1, Mar. 28, 2024
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/315 (2023.02) [H10B 12/34 (2023.02); H10B 12/50 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate including an active region, the active region including a first region and a second region;
a bitline extending in a first direction on the substrate and electrically connected to the first region of the active region;
a spacer structure disposed on a side surface of the bitline;
a contact structure disposed on a side surface of the spacer structure and electrically connected to the second region of the active region; and
a data storage structure disposed on the contact structure and electrically connected to the contact structure,
wherein the contact structure includes:
a conductive contact layer including a first portion and a second portion disposed on the first portion;
a barrier layer surrounding the first portion of the conductive contact layer; and
an air gap surrounding the second portion of the conductive contact layer.