US 12,439,584 B2
Dynamic flash memory (DFM) with ring-type insulator in channel for improved retention
Yuancheng Yang, Hubei (CN); Dongxue Zhao, Hubei (CN); Tao Yang, Hubei (CN); Lei Liu, Hubei (CN); Di Wang, Hubei (CN); Kun Zhang, Hubei (CN); Wenxi Zhou, Hubei (CN); Zhiliang Xia, Hubei (CN); and Zongliang Huo, Hubei (CN)
Assigned to Yangtze Memory Technologies Co., Ltd., Wuhan (CN)
Filed by Yangtze Memory Technologies Co., Ltd., Hubei (CN)
Filed on Apr. 28, 2022, as Appl. No. 17/731,530.
Prior Publication US 2023/0354579 A1, Nov. 2, 2023
Int. Cl. H10B 12/00 (2023.01)
CPC H10B 12/20 (2023.02) 10 Claims
OG exemplary drawing
 
1. A three-dimensional memory device comprising:
a memory cell comprising:
a pillar;
an insulating layer surrounding the pillar;
a first gate contact surrounding a first portion of the insulating layer, the first gate contact coupled to a word line configured to address and non-destructively read the pillar;
a second gate contact surrounding a second portion of the insulating layer, the second gate contact coupled to a plate line configured to program the pillar; and
an annular dielectric layer radially separating the pillar into a channel and a body, the body to store an electrical charge, the annular dielectric layer between the body of the pillar and the insulating layer.