US 12,439,579 B2
Static random access memory and method for fabricating the same
Chia-Chen Sun, Kaohsiung (TW)
Assigned to UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed by UNITED MICROELECTRONICS CORP., Hsin-Chu (TW)
Filed on Mar. 21, 2023, as Appl. No. 18/123,992.
Claims priority of application No. 202310142379.9 (CN), filed on Feb. 21, 2023.
Prior Publication US 2024/0284651 A1, Aug. 22, 2024
Int. Cl. H10B 10/00 (2023.01)
CPC H10B 10/12 (2023.02) 17 Claims
OG exemplary drawing
 
1. A method for fabricating a static random access memory (SRAM), comprising:
forming a first fin-shaped structure for a first pull-down (PD) transistor on a substrate;
forming a second fin-shaped structure for a second PD transistor on the substrate, wherein the first fin-shaped structure and the second fin-shaped structure comprise a first recess therebetween;
forming a third fin-shaped structure for a first pass gate (PG) transistor on the substrate; and
forming a fourth fin-shaped structure for a second PG transistor on the substrate, wherein the third fin-shaped structure and the fourth fin-shaped structure comprise no recess therebetween.