US 12,439,176 B2
Control method of high gain image sensor
Lixin Zhao, Shanghai (CN); Jingwei Wei, Shanghai (CN); Yuhao Wen, Shanghai (CN); and Huaizhao Li, Shanghai (CN)
Assigned to GALAXYCORE SHANGHAI LIMITED CORPORATION, Shanghai (CN)
Appl. No. 18/994,566
Filed by GALAXYCORE SHANGHAI LIMITED CORPORATION, Shanghai (CN)
PCT Filed Jul. 20, 2023, PCT No. PCT/CN2023/108311
§ 371(c)(1), (2) Date Jan. 14, 2025,
PCT Pub. No. WO2025/007372, PCT Pub. Date Jan. 9, 2025.
Claims priority of application No. 202310816052.5 (CN), filed on Jul. 4, 2023.
Prior Publication US 2025/0267376 A1, Aug. 21, 2025
Int. Cl. H04N 25/51 (2023.01); H04N 25/616 (2023.01); H04N 25/709 (2023.01); H04N 25/77 (2023.01); H04N 25/78 (2023.01)
CPC H04N 25/51 (2023.01) [H04N 25/616 (2023.01); H04N 25/709 (2023.01); H04N 25/77 (2023.01); H04N 25/78 (2023.01)] 20 Claims
OG exemplary drawing
 
1. A control method of a high gain image sensor, wherein
the high gain image sensor comprises a plurality of columns of pixel units arranged in an array, each column of pixel units has a column-common current input connecting line and a column-common current output connecting line, a gate of a source follower transistor of each pixel unit in each column is connected to a respective floating diffusion region, a drain of the source follower transistor of each pixel unit in each column is connected to the column-common current input connecting line, and a source of the source follower transistor of each pixel unit in each column is connected to the column-common current output connecting line directly or through respective row selection transistors;
the column-common current input connecting line and the column-common current output connecting line are connected to a column signal readout unit;
the column signal readout unit comprises a column bias current source and a column P-channel Metal-Oxide-Semiconductor (PMOS) amplifier transistor, wherein the column bias current source is connected to the column-common current output connecting line, a drain of the column PMOS amplifier transistor is connected to the column-common current input connecting line, and a gate of the column PMOS amplifier transistor is connected to the column-common current output connecting line directly or through a capacitor, to acquire an amplified signal of a floating diffusion region of a readout row pixel unit on the column-common current input connecting line.