US 12,438,540 B2
Switching module
Hiroshi Kunitama, Yokohama (JP); and Takuya Yoshida, Yokohama (JP)
Assigned to KYOSAN ELECTRIC MFG. CO., LTD., Yokohama (JP)
Appl. No. 18/034,762
Filed by KYOSAN ELECTRIC MFG. CO., LTD., Yokohama (JP)
PCT Filed Jun. 22, 2021, PCT No. PCT/JP2021/023661
§ 371(c)(1), (2) Date May 1, 2023,
PCT Pub. No. WO2022/107375, PCT Pub. Date May 27, 2022.
Claims priority of application No. 2020-192669 (JP), filed on Nov. 19, 2020.
Prior Publication US 2023/0421152 A1, Dec. 28, 2023
Int. Cl. H03K 17/687 (2006.01); H03K 17/78 (2006.01)
CPC H03K 17/687 (2013.01) [H03K 17/78 (2013.01); H03K 2217/0036 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A switching module comprising a GaN-FET mounted on a substrate, a driver circuit connected to a gate electrode of the GaN-FET via a gate resistance, and a driver power supply for applying a drive voltage to the driver circuit, wherein
the driver circuit has a configuration in which a plurality of logic integrated circuits (ICs) are connected in parallel with a same drive signal input, and output currents from the plurality of logic integrated circuits (ICs) simultaneously drive the GaN-FET as a single gate current; and
the driver power supply includes a coreless transformer having an air-core coil.