US 12,438,518 B2
Bulk acoustic wave resonator and fabrication method therefor
Ming Wu, Suzhou Nano (CN); Zhaoyun Tang, Suzhou Nano (CN); Qinghua Yang, Suzhou Nano (CN); Zhiguo Lai, Suzhou Nano (CN); and Jiayou Wang, Suzhou Nano (CN)
Assigned to SUZHOU HUNTERSUN ELECTRONICS CO., LTD., Suzhou Nano (CN)
Appl. No. 17/919,464
Filed by Suzhou HunterSun Electronics Co., Ltd., Suzhou Nano (CN)
PCT Filed Apr. 19, 2021, PCT No. PCT/CN2021/088160
§ 371(c)(1), (2) Date Oct. 17, 2022,
PCT Pub. No. WO2021/213333, PCT Pub. Date Oct. 28, 2021.
Claims priority of application No. 202010313604.7 (CN), filed on Apr. 20, 2020; application No. 202010314202.9 (CN), filed on Apr. 20, 2020; and application No. 202010314204.8 (CN), filed on Apr. 20, 2020.
Prior Publication US 2023/0155570 A1, May 18, 2023
Int. Cl. H03H 9/205 (2006.01); H03H 3/02 (2006.01); H03H 9/02 (2006.01); H03H 9/13 (2006.01); H03H 9/17 (2006.01)
CPC H03H 9/205 (2013.01) [H03H 3/02 (2013.01); H03H 9/02015 (2013.01); H03H 9/131 (2013.01); H03H 9/173 (2013.01); H03H 9/174 (2013.01); H03H 2003/021 (2013.01); H03H 2003/023 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A bulk acoustic wave (BAW) resonator, comprising:
a piezoelectric film array, comprising a plurality of piezoelectric films between a substrate of a chip and a capping layer on a top, wherein a plurality of first cavities are provided between adjacent piezoelectric films of the plurality of piezoelectric films in a vertical direction, between the piezoelectric films of the plurality of piezoelectric films and the capping layer, and between the plurality of piezoelectric films and the substrate, second cavities are shared between adjacent piezoelectric films of the plurality of piezoelectric films in a first direction in a horizontal plane, and third cavities are shared between adjacent piezoelectric films of the plurality of piezoelectric films in a second direction in the horizontal plane;
a plurality of electrode layers, covering at least the top surface and bottom surface of each of the plurality of piezoelectric films; and
a plurality of electrode interconnection layers, connected to the plurality of electrode layers on the bottom surfaces of the plurality of piezoelectric films along sidewalls of the third cavities.