US 12,438,516 B2
Resonator and method of forming the same
Sagnik Ghosh, Singapore (SG); Eldwin Jiaqiang Ng, Singapore (SG); Jaibir Sharma, Singapore (SG); and Srinivas Merugu, Singapore (SG)
Assigned to AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH, Singapore (SG)
Appl. No. 18/548,275
Filed by AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH, Singapore (SG)
PCT Filed Mar. 22, 2021, PCT No. PCT/SG2021/050151
§ 371(c)(1), (2) Date Aug. 29, 2023,
PCT Pub. No. WO2022/203590, PCT Pub. Date Sep. 29, 2022.
Prior Publication US 2024/0137001 A1, Apr. 25, 2024
Prior Publication US 2024/0235522 A9, Jul. 11, 2024
Int. Cl. H03H 9/13 (2006.01); H03H 3/02 (2006.01); H03H 9/17 (2006.01)
CPC H03H 9/13 (2013.01) [H03H 3/02 (2013.01); H03H 9/17 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A resonator comprising:
a support comprising a substrate portion, and a membrane portion extending from the substrate portion over a cavity;
a piezoelectric layer on the membrane portion; and
an electrode on the piezoelectric layer;
wherein the substrate portion comprises dopants of a first conductivity type;
wherein the membrane portion comprises dopants of a second conductivity type different from the first conductivity type; and
wherein a ratio of a thickness of the membrane portion to a combined thickness of the electrode and the piezoelectric layer is above 3:1 for temperature compensation.