US 12,438,342 B2
Semiconductor light-emitting element and method of fabricating semiconductor light-emitting element
Kunimasa Takahashi, Toyama (JP); Shinji Yoshida, Shiga (JP); and Hidetoshi Furukawa, Toyama (JP)
Assigned to NUVOTON TECHNOLOGY CORPORATION JAPAN, Kyoto (JP)
Filed by Nuvoton Technology Corporation Japan, Kyoto (JP)
Filed on Apr. 19, 2022, as Appl. No. 17/723,963.
Application 17/723,963 is a continuation of application No. PCT/JP2020/041250, filed on Nov. 4, 2020.
Claims priority of application No. 2019-203485 (JP), filed on Nov. 8, 2019.
Prior Publication US 2022/0247156 A1, Aug. 4, 2022
Int. Cl. H01S 5/30 (2006.01); H01S 5/22 (2006.01); H01S 5/343 (2006.01); H01L 21/02 (2006.01)
CPC H01S 5/305 (2013.01) [H01S 5/221 (2013.01); H01S 5/3063 (2013.01); H01S 5/34333 (2013.01); H01S 5/34346 (2013.01); H01L 21/0254 (2013.01); H01L 21/02579 (2013.01); H01L 21/0262 (2013.01)] 26 Claims
OG exemplary drawing
 
1. A semiconductor light-emitting element comprising:
a light emission layer including a group III nitride semiconductor;
an electron barrier layer disposed above the light emission layer and including a group III nitride semiconductor containing Al; and
a clad layer disposed above and in contact with the electron barrier layer and including a group III nitride semiconductor, wherein:
the electron barrier layer and the clad layer contain Mg as a dopant,
the clad layer includes a high carbon concentration region containing carbon and a low carbon concentration region having a carbon concentration lower than a carbon concentration of the high carbon concentration region, in a stated order from an electron barrier layer side, and
each of the high carbon concentration region and the low carbon concentration region has an Mg concentration higher than the carbon concentration.