US 12,438,149 B2
Assembly, battery cell, battery, and electric apparatus containing same
Xingyan You, Ningde (CN); Yuwen Wang, Ningde (CN); Wenlong Bai, Ningde (CN); Wei Zheng, Ningde (CN); Baozhen Wu, Ningde (CN); and Kai Wu, Ningde (CN)
Assigned to CONTEMPORARY AMPEREX TECHNOLOGY (HONG KONG) LIMITED, Hong Kong (CN)
Filed by Contemporary Amperex Technology (Hong Kong) Limited, Hong Kong (CN)
Filed on Jan. 23, 2025, as Appl. No. 19/034,792.
Application 19/034,792 is a continuation of application No. PCT/CN2023/070150, filed on Jan. 3, 2023.
Prior Publication US 2025/0226399 A1, Jul. 10, 2025
Int. Cl. H01M 4/38 (2006.01); H01M 4/36 (2006.01); H01M 4/48 (2010.01); H01M 4/587 (2010.01); H01M 10/0587 (2010.01); H01M 50/103 (2021.01); H01M 4/02 (2006.01)
CPC H01M 4/366 (2013.01) [H01M 4/48 (2013.01); H01M 4/587 (2013.01); H01M 10/0587 (2013.01); H01M 50/103 (2021.01); H01M 2004/021 (2013.01); H01M 2004/027 (2013.01); H01M 2220/20 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A negative electrode plate, comprising:
a negative electrode current collector, having a first surface and a second surface opposite each other in a thickness direction of the negative electrode current collector;
a first negative electrode film layer located on the first surface side, wherein the first negative electrode film layer comprises first silicon-based negative electrode active material particles, and a grain size d1 of a crystal grain contained in the first silicon-based negative electrode active material particle and a median particle size by volume Dv150 of the first silicon-based negative electrode active material particles satisfy: 0.0003≤d1/Dv150≤0.004; and
a second negative electrode film layer located on the second surface side, wherein the second negative electrode film layer comprises second silicon-based negative electrode active material particles, and a grain size d2 of a crystal grain contained in the second silicon-based negative electrode active material particles and a median particle size by volume Dv250 of the second silicon-based negative electrode active material particles satisfy:
0.0002≤d2/Dv250≤0.002;
wherein
a capacity C1 per unit area of the first negative electrode film layer and a capacity C2 per unit area of the second negative electrode film layer satisfy: 0.005 mAh/(g·mm2)≤C2<C1≤0.2 mAh/(g·mm2).