US 12,438,137 B2
Integrated packages having electrical devices and photonic devices and methods of manufacturing the same
Chan-Hong Chern, Palo Alto, CA (US)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Jun. 7, 2022, as Appl. No. 17/834,600.
Prior Publication US 2023/0395583 A1, Dec. 7, 2023
Int. Cl. H01L 25/16 (2023.01); H01L 21/768 (2006.01); H01L 23/00 (2006.01); H01L 23/48 (2006.01); H10F 77/40 (2025.01)
CPC H01L 25/167 (2013.01) [H01L 21/76898 (2013.01); H01L 23/481 (2013.01); H01L 24/08 (2013.01); H01L 24/16 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H10F 77/413 (2025.01); H01L 2224/08145 (2013.01); H01L 2224/16145 (2013.01); H01L 2224/48225 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor package, comprising:
a photonic die having a first side and a second side opposite to each other; and
an electrical die having a third side and a fourth side opposite to each other;
wherein the first side of the photonic die faces the third side of the electrical die;
wherein the photonic die has an index matching material extending from a surface of the photonic die on the second side into the photonic die; and
wherein the electrical die, in an order from the third side to the fourth side, comprises:
a plurality of metallization layers, each of which includes a plurality of interconnect structures;
a plurality of transistors; and
a silicon layer.