| CPC H01L 25/0657 (2013.01) [H01L 21/76877 (2013.01); H01L 21/76897 (2013.01); H10B 80/00 (2023.02)] | 13 Claims |
|
1. A semiconductor device comprising:
a first semiconductor structure including a first semiconductor substrate, one or more first conductive patterns disposed over the first semiconductor substrate, a plurality of first conductive plugs connected to each of the one or more first conductive patterns thereover, and a first bonding pad connected to each of the plurality of first conductive plugs thereover;
a second semiconductor structure including a second semiconductor substrate, a plurality of second conductive patterns disposed under the second semiconductor substrate, one or more second conductive plugs connected to each of the plurality of second conductive patterns thereunder, and a second bonding pad connected to each of the one or more second conductive plugs thereunder; and
two through electrodes penetrating the second semiconductor substrate and respectively connected to two second conductive patterns positioned at opposite ends of the plurality of second conductive patterns,
wherein the second bonding pad is bonded to the first bonding pad so that the plurality of second conductive patterns, the one or more second conductive plugs, the second bonding pad, the first bonding pad, the plurality of first conductive plugs, and the one or more first conductive patterns form a daisy chain.
|