| CPC H01L 25/0655 (2013.01) [H01L 21/563 (2013.01); H01L 21/6835 (2013.01); H01L 23/3128 (2013.01); H01L 23/5383 (2013.01); H01L 23/5385 (2013.01); H01L 24/14 (2013.01); H01L 25/50 (2013.01); H01L 23/49816 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/29 (2013.01); H01L 24/32 (2013.01); H01L 24/81 (2013.01); H01L 24/83 (2013.01); H01L 24/92 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68363 (2013.01); H01L 2224/13023 (2013.01); H01L 2224/131 (2013.01); H01L 2224/13147 (2013.01); H01L 2224/1403 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/16235 (2013.01); H01L 2224/29294 (2013.01); H01L 2224/2939 (2013.01); H01L 2224/32225 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/81191 (2013.01); H01L 2224/81815 (2013.01); H01L 2224/83102 (2013.01); H01L 2224/83192 (2013.01); H01L 2224/83385 (2013.01); H01L 2224/92125 (2013.01); H01L 2924/01014 (2013.01); H01L 2924/014 (2013.01); H01L 2924/15192 (2013.01); H01L 2924/15311 (2013.01); H01L 2924/15313 (2013.01); H01L 2924/15738 (2013.01); H01L 2924/18161 (2013.01)] | 18 Claims |

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1. An electronic device, comprising:
a patch comprising a patch top side, a patch bottom side, patch signal paths, one or more patch dielectric layers, and patch lateral sides between the patch top side and the patch bottom side;
a substrate comprising a substrate top side, a substrate bottom side, substrate signal paths, and one or more substrate dielectric layers, wherein the one or more substrate dielectric layers surround the one or more patch dielectric layers and the patch lateral sides;
a first semiconductor die over the substrate top side;
a second semiconductor die over the substrate top side;
conductive interconnects along the substrate bottom side, wherein the substrate signal paths provide first signal paths between one or more of the conductive interconnects and the first semiconductor die and provide second signal paths between one or more of the conductive interconnects and the second semiconductor die; and
wherein the patch signal paths provide signal paths between the first semiconductor die and the second semiconductor die.
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