	US 12,438,122 B2
	DBI to Si bonding for simplified handle wafer
Chandrasekhar Mandalapu, Morrisville, NC (US); Gaius Gillman Fountain, Jr., Youngsville, NC (US); and Guilian Gao, Campbell, CA (US)
Assigned to Adeia Semiconductor Bonding Technologies Inc., San Jose, CA (US)
Filed by ADEIA SEMICONDUCTOR BONDING TECHNOLOGIES INC., San Jose, CA (US)
Filed on Sep. 11, 2023, as Appl. No. 18/464,982.
Application 18/464,982 is a continuation of application No. 17/209,638, filed on Mar. 23, 2021, granted, now 11,791,307.
Application 17/209,638 is a continuation of application No. 16/386,261, filed on Apr. 17, 2019, granted, now 10,964,664, issued on Mar. 30, 2021.
Claims priority of provisional application 62/660,509, filed on Apr. 20, 2018.
Prior Publication US 2024/0186284 A1, Jun. 6, 2024
Int. Cl. H01L 21/683 (2006.01); H01L 21/78 (2006.01); H01L 23/00 (2006.01); H01L 25/065 (2023.01)

CPC H01L 24/83 (2013.01) [H01L 21/6836 (2013.01); H01L 21/78 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01); H01L 24/09 (2013.01); H01L 24/32 (2013.01); H01L 24/33 (2013.01); H01L 24/98 (2013.01); H01L 2221/68327 (2013.01); H01L 2221/68368 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/03002 (2013.01); H01L 2224/08145 (2013.01); H01L 2224/09181 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/80895 (2013.01); H01L 2224/83009 (2013.01); H01L 2224/83896 (2013.01); H01L 2224/83948 (2013.01)]

32 Claims

1. A method comprising:

preparing a bonding surface of a first bonding layer on a substrate;

direct bonding a first side of each of a plurality of dies to the bonding surface using a direct non-adhesive technique to form at least a portion of a structure;

while the substrate supports the plurality of dies, processing a second side of each of the plurality of dies, wherein the second side is opposite the first side;

after processing the second side of each of the plurality of dies, removing at least the substrate by grinding or polishing the substrate to expose a surface of each of the plurality of dies;

applying a first protective coating over the surface and a second protective coating over the first protective coating, wherein the first protective coating is formed of a first material and the second protective coating is formed of a second material that is different than the first material; and

after removing the substrate, singulating the structure to form a plurality of microelectronic units, wherein each of the plurality of microelectronic units comprises at least one of the plurality of dies.

13. A method comprising:

direct bonding a plurality of dies to a first bonding layer on a substrate using a permanent direct non-adhesive technique, wherein the plurality of dies comprises a first die;

while the substrate supports the plurality of dies, planarizing a first surface of each of the plurality of dies and providing a second bonding layer on the first surfaces, wherein the first surfaces face away from the substrate;

removing at least the substrate by grinding or polishing to expose a second surface of each of the plurality of dies;

applying a first protective coating over the second surface and a second protective coating over the first protective coating, wherein the first protective coating is formed of a first material and the second protective coating is formed of a second material that is different than the first material; and

direct bonding a second die to the second bonding layer on the first die using a direct bonding technique without an adhesive, wherein the second bonding layer on the first die comprises a first conductive feature and the second die comprises a second conductive feature directly bonded to the first conductive feature.

22. A method comprising:

providing a bonded structure comprising a microelectronic component directly bonded to a bonding layer on a substrate using a direct non-adhesive technique;

while the substrate supports the microelectronic component, processing the microelectronic component to form a first surface on the microelectronic component, wherein the first surface faces away from the substrate;

after processing the microelectronic component to form the first surface, removing at least the substrate to expose a second surface of the microelectronic component;

after applying the first and second protective coatings, singulating the bonded structure to form a plurality of microelectronic units, wherein at least one of the plurality of microelectronic units comprises the microelectronic component.