US 12,438,108 B2
Semiconductor device
Yoichi Hori, Himeji Hyogo (JP)
Assigned to Kabushiki Kaisha Toshiba; and Toshiba Electronic Devices & Storage Corporation
Filed by Kabushiki Kaisha Toshiba, Tokyo (JP); and Toshiba Electronic Devices & Storage Corporation, Tokyo (JP)
Filed on Mar. 1, 2023, as Appl. No. 18/177,078.
Claims priority of application No. 2022-146349 (JP), filed on Sep. 14, 2022.
Prior Publication US 2024/0088073 A1, Mar. 14, 2024
Int. Cl. H01L 23/00 (2006.01); H01L 23/31 (2006.01); H10D 8/60 (2025.01); H10D 64/23 (2025.01); H01L 23/29 (2006.01)
CPC H01L 24/05 (2013.01) [H01L 23/3135 (2013.01); H10D 8/60 (2025.01); H10D 64/23 (2025.01); H01L 23/296 (2013.01); H01L 2224/05553 (2013.01); H01L 2224/05556 (2013.01); H01L 2224/05567 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05647 (2013.01); H01L 2924/12032 (2013.01); H01L 2924/186 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first electrode;
a semiconductor layer above the first electrode in a first direction and including a first region and a second region surrounding the first region in a first plane perpendicular to the first direction;
a second electrode having a first portion and a second portion that is thinner than the first portion in the first direction and surrounding the first portion in a plane parallel to the first plane, the first portion and the second portion being above the first region of the semiconductor layer in the first direction;
an insulating first resin on the second region and covering an outer periphery of the first portion and the second portion; and
an insulating second resin on the second electrode and the insulating first resin, the insulating second resin comprising a resin material different from the insulating first resin.