US 12,438,107 B2
High frequency devices including attenuating dielectric materials
Pietro Brenner, Ebersberg (DE); Walter Hartner, Bad Abbach-Peissing (DE); Julian Winfried Kaiser, Munich (DE); and Saqib Kaleem, Munich (DE)
Assigned to Infineon Technologies AG, Neubiberg (DE)
Filed by Infineon Technologies AG, Neubiberg (DE)
Filed on Nov. 9, 2021, as Appl. No. 17/454,120.
Claims priority of application No. 102020133756.6 (DE), filed on Dec. 16, 2020.
Prior Publication US 2022/0189892 A1, Jun. 16, 2022
Int. Cl. H01L 23/66 (2006.01); H01L 23/31 (2006.01); H01L 23/552 (2006.01); H01L 25/065 (2023.01); H01Q 1/52 (2006.01); H10F 77/50 (2025.01); H10K 30/88 (2023.01)
CPC H01L 23/66 (2013.01) [H01L 23/3114 (2013.01); H01L 23/552 (2013.01); H01L 25/0657 (2013.01); H01L 2223/6677 (2013.01); H01L 2223/6688 (2013.01); H01Q 1/52 (2013.01); H01Q 1/525 (2013.01); H10F 77/50 (2025.01); H10K 30/88 (2023.02)] 27 Claims
OG exemplary drawing
 
1. A device, comprising:
a high frequency chip;
a first component configured to radiate an interference signal in a first direction and at a first frequency range between 1 gigahertz (GHz) and 1 terahertz (THz);
a second component configured to receive an electromagnetic signal from a second direction different from the first direction; and
a dielectric material residing on side surfaces of the high frequency chip and arranged between the first component and the second component,
wherein the dielectric material comprises filler particles at least partly including nanoparticles configured to scatter the interference signal when the interference signal travels through the dielectric material, and
wherein, in a subrange of the first frequency range, the dielectric material has an attenuation of more than 5 decibels per centimeter (dB/cm).