US 12,438,105 B2
Seal ring structure and method of fabricating the same
Yen Lian Lai, New Taipei (TW); Chun Yu Chen, Hsinchu (TW); Yen-Sen Wang, Hsinchu (TW); and Chung-Yi Lin, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu (TW)
Filed on May 5, 2022, as Appl. No. 17/737,646.
Claims priority of provisional application 63/227,254, filed on Jul. 29, 2021.
Prior Publication US 2023/0035217 A1, Feb. 2, 2023
Int. Cl. H01L 23/58 (2006.01); H01L 23/522 (2006.01); H01L 23/528 (2006.01)
CPC H01L 23/585 (2013.01) [H01L 23/5226 (2013.01); H01L 23/528 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a substrate;
a seal ring region around a circuit region over the substrate, wherein the seal ring region includes a sealing region and a transition region, and wherein the transition region is disposed between the sealing region and the circuit region; and
a stack of metal layers disposed over the circuit region, the transition region and the sealing region, wherein
a metal layer of the stack of metal layers includes:
metal rings disposed in the sealing region including a first section along a first direction and a second section along a second direction, wherein the second direction is substantially perpendicular to the first direction;
metal transition lines disposed in the transition region along the first section and the second section, wherein the metal transition lines are oriented lengthwise along the first direction; and
metal lines disposed in the circuit region and oriented parallel to the metal transition lines.